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| Differential Magneto Resistor FP 425 L 90 Dimensions in mm Features * * * * * * * Double differential magneto resistor on one carrier Accurate intercenter spacing High operating temperature range High output voltage Compact construction Available in strip form for automatic assembly Optimized intercenter spacing on modules m = 0.5 mm * Reduced temperature dependence of offset voltage Typical applications * * * * Incremental angular encoders Detection of sense of rotation Detection of speed Detection of position Semiconductor Group 1 07.96 FP 425 L 90 Type FP 425 L 90 FP 425 L 90 Ordering Code Q65425-L90 (singular) Q65425-L0090E001 (taped) The double differential magneto resistor assembly consists of two pairs of magneto resistors, (L-type InSb/NiSb semiconductor resistors whose resistance value can be magnetically controlled), which are fixed to a silicon substrate. Contact to the magneto resistors is achieved using a copper/polyimide carrier film known as TAB. The basic resistance of each of the magneto resistors is 90 . The two series coupled pairs of magneto resistor are actuated by an external magnetic field or can be biased by a permanent magnet and actuated by a soft iron target. Semiconductor Group 2 FP 425 L 90 Maximum ratings Parameter Operating temperature Storage temperature Power dissipation1) Supply voltage (B = 0.2 T, TA = 25 C) Thermal conductivity -attached to heatsink -in still air Characteristics (TA = 25 C) Nominal supply voltage (B = 0.2 T)2) Basic resistance (I < 1 mA, B = 0 T) Center symmetry3) Relative resistance change (R0 = R01-3, R04-6 at B = 0 T) B = 0.3 T4) B=1T Temperature coefficient B=0T B = 0.3 T B=1T Symbol Value - 40 / + 175 - 40 / + 185 800 8 20 2 Unit C C mW V mW/K mW/K TA Tstg Ptot VIN Gthcase GthA VINN R01-3 M RB/R0 5 160 - 280 3 V % - > 1.7 >7 TCR - 0.16 - 0.38 - 0.54 %/K %/K %/K 1) 2) 3) T = Tcase T = Tcase, T < 80 C M M R 01 - 2 - R 02 - = -------------------------------3 x 100% for R01-2 > R02-3 - = ------------------------------- x 100% for R04-5 > R05-6 R 04 - 5 R 01 - 2 R 04 - 5 - R 05 - 6 4) 1 T = 1 Tesla = 104 Gauss Semiconductor Group 3 FP 425 L 90 Max. power dissipation versus temperature Ptot = f(T), T = Tcase, TA Maximum supply voltage versus temperature VIN = f(T), B = 0.2 T Typical MR resistance versus temperature R01-3, 4-6 = f(TA), B = Parameter Typical MR resistance versus magnetic induction B R01-3, 4-6 = f(B), TA = 25 C Semiconductor Group 4 |
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